The image sensor technology roadmap is rapidly approaching a fundamental limit as state of the art pixel dimensions reach 1µm. At these dimensions the active photodiode area of each pixel approach the wavelength of visible light and signal strength is greatly diminished.

SiOnyx's shallow junction photonics technology is poised to redefine silicon based imaging.
The SiOnyx laser process dramatically enhances silicon's detector response enabling 1 µm SiOnyx Black Silicon pixels that produce more signal than 36 µm traditional silicon pixels.